New Zener Diode Structure Between Base and the Collector Using Retrograded Profile

Author

Park, K.

Author_Institution

Fairchild Korea Semicond. Ltd., Bucheon

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

125

Lastpage

128

Abstract

A new Zener diode structure for bipolar transistor is proposed and analyzed. By placing the Zener diode at junction termination, we could obtain stable clamped breakdown voltage without deterioration of device performance. P+ layer of the Zener diode is embedded with base of transistor simultaneously so that whole functional behaviors of the composite transistor could be realized with relatively simple process. The breakdown voltage of the Zener diode is controlled only by adjusting of the phosphorus implantation dose. The breakdown voltage distribution of the fabricated Zener diode is less than ±4%. The BV_CBO and BV_CEO of bipolar transistors are about 50 V, same as the breakdown voltage of Zener diodes. And the DC current gain is 300 at V_CE=2 V and I_C=0.5 A

Keywords

Zener diodes; Zener effect; bipolar transistors; ion implantation; phosphorus; 0.5 A; 2 V; Zener diode; bipolar transistor; breakdown voltage; phosphorus implantation dose; retrograded profile; Anodes; Bipolar transistors; Circuits; Clamps; Costs; Electric variables; Protection; Resistors; Semiconductor diodes; Voltage control; bipolar transistor; retrograded profile; zener diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577508

Filename

1577508