A highly reliable sub-half-micron via and interconnect technology using Al alloy high-temperature sputter filling

Author

Nishimura, H. ; Yamada, T. ; Sinclair, R. ; Ogawa, S.

Author_Institution

Matsushita Electric Industrial Co. Ltd., Osaka, Japan

fYear

1992

fDate

2-4 June 1992

Firstpage

74

Lastpage

75

Abstract

A technology using Al-Si-Cu alloy high-temperature sputter filling and a thin Ti underlayer to prevent Si from precipitating is discussed. Complete filling of a 0.15- mu m-diameter via with aspect ratio of 4.5 has been achieved. The resistance of the 0.3- mu m sputter filled via was 0.71 Omega . This is about one order of magnitude lower than that for a conventional via. The electromigration resistance of the 0.3- mu m filled via was found to be four orders of magnitude greater than that of the conventional vias. Superior stress-induced migration resistance of 0.5- mu m wide lines was confirmed.<>

Keywords

aluminium alloys; contact resistance; copper alloys; electromigration; metallisation; silicon alloys; sputter deposition; 0.3 micron; 0.5 micron; 0.71 ohm; AlSiCu; aspect ratio; electromigration resistance; high reliability; high-temperature sputter filling; interconnect technology; stress-induced migration resistance; sub-half-micron via; thin Ti underlayer; Aluminum alloys; Artificial intelligence; Cobalt alloys; Filling; Glass; Passivation; Plugs; Samarium; Silicon; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on

Conference_Location

Seattle, WA, USA

Print_ISBN

0-7803-0698-8

Type

conf

DOI

10.1109/VLSIT.1992.200651

Filename

200651