Influence of stress-induced void formation on electromigration endurance in quarter-micron aluminum interconnects

Author

Matsunaga, N. ; Shibata, H. ; Hashimoto, K.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1992

fDate

2-4 June 1992

Firstpage

76

Lastpage

77

Abstract

A study to characterize the electromigration behavior in quarter-micron lines is discussed. An increase of activation energy (E/sub a/) with reduction of line width has been experimentally observed. It was also found that there is a region where the lifetime degrades in spite of an increase in E/sub a/ as line width is reduced. This degradation is caused by current crowding and joule-heating around voids that exist before current stressing. According to the electromigration model, a larger grain size and higher

Keywords

aluminium; electromigration; grain size; life testing; metallisation; voids (solid); 0.25 micron; Al interconnects; Al-TiN-Ti; activation energy; current crowding; electromigration endurance; grain size; joule-heating; lifetime degradation; line width; quarter-micron lines; stress-induced void formation; Aluminum; Artificial intelligence; Conductive films; Current density; Electromigration; Grain boundaries; Grain size; Proximity effect; Testing; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on

Conference_Location

Seattle, WA, USA

Print_ISBN

0-7803-0698-8

Type

conf

DOI

10.1109/VLSIT.1992.200652

Filename

200652