Two-Photon Excited Photoluminescence in InGaN Multi-Quantum-Wells Structures

Author

Li, Q. ; Xu, S.J. ; Dai, D.C. ; Che, C.M.

Author_Institution

Dept. of Phys., Hong Kong Univ.

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

153

Lastpage

156

Abstract

In this work, we report on the two-photon absorption induced luminescence of InGaN multiple quantum wells grown on sapphire. When the sample was excited by femtosecond near-infrared laser pulses at room temperature, an intense luminescence signal peaked at ∼415 nm from the sample was observed, which indicates strong nonlinear optical effect in InGaN quantum well structures. The interferometric autocorrelated luminescence traces were recorded to verify the second order nonlinearity of the luminescence. In addition, the strong second harmonic generation signal of the excitation laser was also observed. The mechanism of the two-photon excited photoluminescence in InGaN quantum wells was discussed

Keywords

gallium compounds; indium compounds; optical harmonic generation; photoluminescence; quantum wells; semiconductor quantum wells; two-photon processes; InGaN; InGaN multi-quantum-wells; femtosecond near-infrared laser pulses; nonlinear optical effect; photoluminescence; second harmonic generation; second order nonlinearity; two-photon excitation; Absorption; Laser excitation; Luminescence; Optical harmonic generation; Optical interferometry; Optical pulses; Photoluminescence; Quantum well lasers; Temperature; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577515

Filename

1577515