Title :
High performance 0.1- mu m room temperature Si MOSFETs
Author :
Yan, R.H. ; Lee, K.F. ; Jeon, D.Y. ; Kim, Y.O. ; Park, B.G. ; Pinto, M.R. ; Rafferty, C.S. ; Tennant, D.M. ; Westerwick, E.H. ; Chin, G.M. ; Morris, M.D. ; Early, K. ; Mulgrew, P. ; Mansfield, W.M. ; Watts, R.K. ; Voshchenkov, A.M. ; Bokor, J. ; Swartz, R
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
The design and implementation of 0.15- mu m-channel N-MOSFETs with very high current drive and good short channel behavior at room temperature are discussed. Measured subthreshold characteristics show a slope of 84 mV/dec and a shift for 75 mV for Delta V/sub ds/=1 V. A peak g/sub m/ of 570 mS/mm was recorded, leading to a unity-current-gain cutoff frequency (f/sub T/) of 89 GHz. Key process steps include the formation of 40-AA gate oxides and sub-500-AA junctions. Vertical doping engineering was used to minimize doping at the surface and beneath the junctions, while maintaining good turn-off characteristics.<>
Keywords :
insulated gate field effect transistors; semiconductor doping; 0.15 micron; 570 mS; 89 GHz; MOSFETs; NMOSFET; gate oxides; high current drive; peak transconductance; room temperature; short channel behavior; subthreshold characteristics; turn-off characteristics; unity-current-gain cutoff frequency; vertical doping engineering; Capacitance; Degradation; Doping; Dry etching; Fabrication; Ice; MOS devices; MOSFETs; Temperature measurement; Threshold voltage;
Conference_Titel :
VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-0698-8
DOI :
10.1109/VLSIT.1992.200661
