Title :
High drivability and high reliability MOSFETs with non-doped poly-Si spacer LDD structure (SLDD)
Author :
Shimizu, A. ; Ohki, N. ; Ishida, H. ; Yamanaka, T. ; Hashimoto, N. ; Hashimoto, T. ; Takeda, E.
Author_Institution :
Hitachi VLSI Eng. Corp., Tokyo, Japan
Abstract :
It was found that a MOSFET with a non-doped poly-Si spacer LDD (SLDD) structure has high current drivability and high reliability in deep submicron regions. The high gate-fringing field effect caused by this spacer introduces lower lateral electric fields and accumulated n/sup -/ regions. The thin SiO/sub 2/ films under the spacer, which vary the gate-fringing field, affect the performance, in particular the hot-carrier effects of the SLDD. Nondoped poly-Si is a good material for this spacer. SLDDs with thin SiO/sub 2/ films (Tsox) varying from 7 to 25 nm under the nondoped poly-Si spacer were investigated. Both the current drivability and the reliability of the SLDD structure strongly depend on Tsox and are better than for the LDD structure with a SiO/sub 2/ spacer (OLDD).<>
Keywords :
hot carriers; insulated gate field effect transistors; reliability; 7 to 25 nm; MOSFET; Si-SiO/sub 2/; accumulated n/sup -/ regions; deep submicron regions; gate-fringing field effect; high current drivability; high reliability; hot-carrier effects; lateral electric fields; nondoped polysilicon spacer LDD structure; thickness range; Fabrication; Impact ionization; Laboratories; Large Hadron Collider; MOSFETs; Semiconductor films; Semiconductor materials; Space technology; Surface resistance; Very large scale integration;
Conference_Titel :
VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-0698-8
DOI :
10.1109/VLSIT.1992.200663
