Simple Fabrication Method for ZnO Nanoneedle Structures

Author

Leung, Y.H. ; Diurigic, A.B. ; Xie, M.H.

Author_Institution

Dept. of Phys., Hong Kong Univ.

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

173

Lastpage

176

Abstract

In this work, we demonstrated a simple synthesis method for ZnO nanoneedle structures which were fabricated at atmospheric pressure. Nanoneedles with diameter in the range 20-40 nm were synthesized in a tube-furnace maintained at 800 °C by evaporation of Zn nanoparticles in humidified Ar flow at 0.25 lpm. The nanostructures were grown on Si substrates at 725-750 °C without any catalyst. The fabricated needle structures show strong UV photoluminescence and weak yellow/orange emission, which indicates the excellent crystal quality of the nanostructures. X-ray diffraction (XRD) found only peaks corresponding to hexagonal ZnO. No peaks from Zn or other impurities were found

Keywords

II-VI semiconductors; X-ray diffraction; nanoparticles; optical fabrication; optical materials; photoluminescence; semiconductor growth; wide band gap semiconductors; zinc compounds; 20 to 40 nm; 725 to 750 degC; 800 degC; UV photoluminescence; X-ray diffraction; Zn nanoparticles; ZnO; ZnO nanoneedle structures; hexagonal ZnO; Argon; Fabrication; Impurities; Nanoparticles; Nanostructures; Needles; Photoluminescence; X-ray diffraction; X-ray scattering; Zinc oxide; ZnO; nanostructures;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577520

Filename

1577520