DocumentCode :
3042448
Title :
Very High-efficiency Transparent-substrate (AlxGa1-x)0.5In0.5P/GaP Light-emitting Diodes
Author :
Kish, F.A. ; Steranka, F.M. ; DeFevere, D.C. ; Vanderwater, D.A. ; Park, K.G.
Author_Institution :
Hewlett-Packard
fYear :
1994
fDate :
6-13 Jul 1994
Keywords :
Chemical vapor deposition; Electromagnetic wave absorption; Epitaxial layers; Gallium arsenide; LED lamps; Light emitting diodes; Physics; Production; Substrates; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:
Print_ISBN :
0-7803-1752-1
Type :
conf
DOI :
10.1109/LEOSST.1994.700527
Filename :
700527
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3042448
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