Title :
Enhanced hot-carrier degradation due to water in TEOS/O/sub 3/-oxide and water blocking effect of ECR-SiO/sub 2/
Author :
Shimoyama, N. ; Machida, K. ; Murase, K. ; Tsuchiya, T.
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
Abstract :
The effect of water and/or silanols in TEOS/O/sub 3/-oxide on hot-carrier degradation is discussed. Hot-carrier degradation in MOSFETs is a serious problem as the thickness of the TEOS/O/sub 3/-oxide interlayer dielectric increases. This results mainly from enhanced hot-electron trapping and also from interface-trap generation, which are related to water and/or silanols in TEOS/O/sub 3/-oxide diffusing into the gate oxide. It is pointed out that by applying an ECR (electron cyclotron resonance) SiO/sub 2/ layer under the TEOS/O/sub 3/-oxide layer, tolerance against hot-carrier damage is improved to the level of MOSFETs without the TEOS/O/sub 3/-oxide layer.<>
Keywords :
dielectric thin films; hot carriers; insulated gate field effect transistors; interface electron states; oxidation; semiconductor device testing; water; ECR layer; MOSFETs; Si-SiO/sub 2/; TEOS/O/sub 3/-oxide layer; enhanced hot-electron trapping; hot-carrier degradation; interface-trap generation; interlayer dielectric; silanols; water blocking effect; Cyclotrons; Degradation; Fabrication; Hot carrier effects; Hot carriers; Laboratories; Large scale integration; MOSFETs; Morphology; Resonance;
Conference_Titel :
VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-0698-8
DOI :
10.1109/VLSIT.1992.200665
