Title :
Suppression of the MOS transistor hot carrier degradation caused by water desorbed from intermetal dielectric
Author :
Shimokawa, K. ; Usami, T. ; Tokitou, S. ; Hirashita, N. ; Yoshimaru, M. ; Ino, M.
Author_Institution :
Oki Electric Co. Ltd., Tokyo, Japan
Abstract :
The effects of absorbed water of spin-on glass (SOG) and tetraethylorthosilicate (TEOS)-O/sub 3/ NSG on MOS transistor hot carrier degradation were investigated. It was found that the absorbed water in SOG and TEOS-O/sub 3/ NSG film desorbs from the film during subsequent low temperature annealing and causes hot carrier degradation. It was also found that plasma CVD silicon oxide (P-SiO) deposited under certain conditions suppresses the hot carrier degradation drastically. Because the P-SiO film has a small water absorption rate, it blocks water penetration to the silicon surface.<>
Keywords :
annealing; hot carriers; insulated gate field effect transistors; plasma CVD coatings; semiconductor device testing; silicon compounds; sorption; water; MOS transistor; NSG film; SOG; Si-SiO; TEOS; absorbed water; hot carrier degradation; intermetal dielectric; low temperature annealing; plasma CVD SiO; tetraethylorthosilicate; water absorption rate; water penetration suppression; Annealing; Chemical technology; Degradation; Dielectric devices; Dielectric measurements; Hot carriers; MOSFETs; Metallization; Plasma temperature; Silicon;
Conference_Titel :
VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-0698-8
DOI :
10.1109/VLSIT.1992.200666
