Quarter micron KrF excimer laser lithography

Author

Endo, M. ; Tani, Y. ; Koizumi, T. ; Kobayashi, S. ; Yamashita, K. ; Sasago, M. ; Nomura, N.

Author_Institution

Matsushita Electric Industrial Co. Ltd., Osaka, Japan

fYear

1992

fDate

2-4 June 1992

Firstpage

110

Lastpage

111

Abstract

For quarter-micron KrF excimer laser lithography, a chemically amplified positive resist with high stability and process compatibility has been developed. 0.25- mu m line and space patterns and 0.35- mu m contact hole patterns have been obtained using this resist. The multiple interference effect due to reflection from air and substrate is reduced by using an overcoat film or antireflective coating. The overcoat film is made of a water-soluble polyvinylalcohol derivative. The refractive index of this polymer is 1.3, which is suitable for the resist (index

Keywords

excimer lasers; krypton compounds; photolithography; photoresists; polymer films; 0.25 micron; 248 nm; KrF excimer laser lithography; antireflective coating; chemically amplified positive resist; contact hole patterns; diazonaphthoquinone; high stability; line patterns; multiple interference effect; overcoat film; polymethacrylate; process compatibility; refractive index; space patterns; water-soluble polyvinylalcohol derivative; Chemical lasers; Chemical processes; Coatings; Interference; Laser stability; Lithography; Optical films; Optical reflection; Polymer films; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on

Conference_Location

Seattle, WA, USA

Print_ISBN

0-7803-0698-8

Type

conf

DOI

10.1109/VLSIT.1992.200673

Filename

200673