Atomic Layer Deposition (ALD) Tungsten NEMS Devices via a Novel Top-Down Approach

Author

Davidson, B.D. ; Chang, Y.J. ; Seghete, D. ; George, S.M. ; Bright, V.M.

Author_Institution

Dept. of Mech. Eng., Univ. of Colorado, Boulder, CO

fYear

2009

fDate

25-29 Jan. 2009

Firstpage

120

Lastpage

123

Abstract

In this paper we present a novel low temperature, CMOS compatible, direct top-down nano-fabrication process employing ALD tungsten (WALD) as a structural material for nano-electro-mechanical systems (NEMS). Using this process doubly clamped suspended NEMS devices have been successfully fabricated and demonstrated. The devices have been observed to operate comparably to 2-terminal electrostatic carbon nanotube (CNT) switches, and MEMS tunneling devices. A lifetime in excess of 660,500 cycles has been observed under low-current-limited operating conditions. Under these conditions the device behavior is stable, reproducible and hysterisis free, resembling that of MEMS tunneling devices.

Keywords

CMOS integrated circuits; atomic layer deposition; carbon nanotubes; electrostatic devices; nanoelectromechanical devices; tungsten; CMOS; MEMS tunneling devices; NEMS; atomic layer deposition tungsten; direct top-down nanofabrication process; electrostatic carbon nanotube switches; low-current-limited operating conditions; nanoelectromechanical systems; top-down approach; Atomic layer deposition; CMOS process; Carbon nanotubes; Electrostatics; Micromechanical devices; Nanoelectromechanical systems; Nanostructured materials; Temperature; Tungsten; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on

Conference_Location

Sorrento

ISSN

1084-6999

Print_ISBN

978-1-4244-2977-6

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2009.4805333

Filename

4805333