Monolithic MZI All-Optical Switch with Selective Area MOVPE

Author

Xueliang Song ; Foo Cheong Yit ; Zhengrui Zhang ; Nakano, Y.

Author_Institution

Tokyo Univ.

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

229

Lastpage

232

Abstract

We demonstrate a bandgap-engineered dynamic monolithic MZI SOA all-optical switch with wide stripe selective area MOVPE. Compared with other simple laser-EAM integration with other bandgap engineering techniques, it is the largest working device ever achieved. All-optical wavelength conversion was achieved with single SOA all-optical modulation. In all-optical switching with differential phase technique, a 28 ps switching window was successfully demonstrated

Keywords

MOCVD; Mach-Zehnder interferometers; energy gap; integrated optics; integrated optoelectronics; monolithic integrated circuits; optical fabrication; optical modulation; optical switches; optical wavelength conversion; semiconductor optical amplifiers; vapour phase epitaxial growth; 28 ps; Mach-Zehnder interferometer switch; all-optical modulation; all-optical switch; all-optical switching; all-optical wavelength conversion; bandgap engineering; differential phase technique; monolithic switch; selective area MOVPE; semiconductor optical amplifier; Epitaxial growth; Epitaxial layers; Indium phosphide; Monolithic integrated circuits; Optical interferometry; Optical waveguides; Photonic band gap; Semiconductor optical amplifiers; Substrates; Switches; Mach-Zehnder interferometer; all-optical switching; bandgap engineering; selective area growth; semiconductoroptical amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577532

Filename

1577532