Title :
A Si bipolar transistor with f/sub max/ of 40 GHz and its application to a 35 GHz 1/16 dynamic frequency divider
Author :
Takemura, H. ; Ogawa, C. ; Kurisu, M. ; Uemura, G. ; Morikawa, T. ; Tashiro, T.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
The development of a Si bipolar transistor with f/sub max/ (maximum frequency of oscillation) of 40 GHz by employing a process which independently optimizes the cutoff frequency (f/sub T/) and the base resistance (r/sub b/) is discussed. By using a A-BSA (advanced BSG self-aligned) technology, the resistance of the link region, the intermediate base region between the intrinsic and extrinsic ones, is controlled by the rediffusion from the BSG side wall to the link region. This process does not degrade f/sub T/. As a result, f/sub max/ of 40 GHz and f/sub T/ of 43 GHz are realized simultaneously. Using this transistor of 1/16 dynamic frequency divider that operates up to 35 GHz has been constructed. The application of Si bipolar transistors will extend to the millimeter-wave frequency region.<>
Keywords :
bipolar transistors; frequency dividers; semiconductor technology; solid-state microwave devices; 1/16 dynamic frequency divider; 35 GHz; 40 GHz; 43 GHz; B2O3-SiO2; BSG film; Si bipolar transistor; advanced BSG self aligned technology; base resistance; cutoff frequency; link region resistance; maximum frequency of oscillation; millimeter-wave frequency region; rediffusion; Annealing; Bipolar transistors; Frequency conversion; Millimeter wave circuits; Millimeter wave technology; Millimeter wave transistors; Paper technology; Power dissipation; Solid state circuits;
Conference_Titel :
VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-0698-8
DOI :
10.1109/VLSIT.1992.200691
