A Si bipolar transistor with f/sub max/ of 40 GHz and its application to a 35 GHz 1/16 dynamic frequency divider

Author

Takemura, H. ; Ogawa, C. ; Kurisu, M. ; Uemura, G. ; Morikawa, T. ; Tashiro, T.

Author_Institution

NEC Corp., Kanagawa, Japan

fYear

1992

fDate

2-4 June 1992

Firstpage

60

Lastpage

61

Abstract

The development of a Si bipolar transistor with f/sub max/ (maximum frequency of oscillation) of 40 GHz by employing a process which independently optimizes the cutoff frequency (f/sub T/) and the base resistance (r/sub b/) is discussed. By using a A-BSA (advanced BSG self-aligned) technology, the resistance of the link region, the intermediate base region between the intrinsic and extrinsic ones, is controlled by the rediffusion from the BSG side wall to the link region. This process does not degrade f/sub T/. As a result, f/sub max/ of 40 GHz and f/sub T/ of 43 GHz are realized simultaneously. Using this transistor of 1/16 dynamic frequency divider that operates up to 35 GHz has been constructed. The application of Si bipolar transistors will extend to the millimeter-wave frequency region.<>

Keywords

bipolar transistors; frequency dividers; semiconductor technology; solid-state microwave devices; 1/16 dynamic frequency divider; 35 GHz; 40 GHz; 43 GHz; B2O3-SiO2; BSG film; Si bipolar transistor; advanced BSG self aligned technology; base resistance; cutoff frequency; link region resistance; maximum frequency of oscillation; millimeter-wave frequency region; rediffusion; Annealing; Bipolar transistors; Frequency conversion; Millimeter wave circuits; Millimeter wave technology; Millimeter wave transistors; Paper technology; Power dissipation; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on

Conference_Location

Seattle, WA, USA

Print_ISBN

0-7803-0698-8

Type

conf

DOI

10.1109/VLSIT.1992.200691

Filename

200691