• DocumentCode
    3042852
  • Title

    A new technique for designing high-performance monolithically integrated In0.53Ga0.47As/InP p-i-n/FET front-end optical receiver

  • Author

    Giorgio, A. ; Perri, A.G. ; Petruzzelli, V.

  • Author_Institution
    Dipartimento di Elettrotecnica ed Elettronica, Bari Univ., Italy
  • Volume
    3
  • fYear
    1996
  • fDate
    13-16 May 1996
  • Firstpage
    1313
  • Abstract
    In this paper a new technique to design monolithic integrated In 0.53Ga0.47As/InP front-end optical receiver is presented. The proposed method, based on the minimization of the noise sources in the receiver through research into the best geometrical parameters, allows us to design the preamplifier directly coupled to the photodiode without any matching network. With a BER equal to 10-9 and a bit rate equal to 622 Mb/s, a front-end optical receiver sensitivity of -41 dBm was obtained
  • Keywords
    indium compounds; 622 Mbit/s; BER; In0.53Ga0.47As-InP; OEIC; bit error rate; high-performance receiver; monolithically integrated receiver; noise sources; optical fibre links; p-i-n/FET front-end optical receiver; photodiode; preamplifier; receiver sensitivity; Geometrical optics; Noise shaping; Optical amplifiers; Optical design; Optical feedback; Optical noise; Optical receivers; Optical sensors; Photodiodes; Quantum capacitance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrotechnical Conference, 1996. MELECON '96., 8th Mediterranean
  • Conference_Location
    Bari
  • Print_ISBN
    0-7803-3109-5
  • Type

    conf

  • DOI
    10.1109/MELCON.1996.551188
  • Filename
    551188
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3042852