Title :
A new technique for designing high-performance monolithically integrated In0.53Ga0.47As/InP p-i-n/FET front-end optical receiver
Author :
Giorgio, A. ; Perri, A.G. ; Petruzzelli, V.
Author_Institution :
Dipartimento di Elettrotecnica ed Elettronica, Bari Univ., Italy
Abstract :
In this paper a new technique to design monolithic integrated In 0.53Ga0.47As/InP front-end optical receiver is presented. The proposed method, based on the minimization of the noise sources in the receiver through research into the best geometrical parameters, allows us to design the preamplifier directly coupled to the photodiode without any matching network. With a BER equal to 10-9 and a bit rate equal to 622 Mb/s, a front-end optical receiver sensitivity of -41 dBm was obtained
Keywords :
indium compounds; 622 Mbit/s; BER; In0.53Ga0.47As-InP; OEIC; bit error rate; high-performance receiver; monolithically integrated receiver; noise sources; optical fibre links; p-i-n/FET front-end optical receiver; photodiode; preamplifier; receiver sensitivity; Geometrical optics; Noise shaping; Optical amplifiers; Optical design; Optical feedback; Optical noise; Optical receivers; Optical sensors; Photodiodes; Quantum capacitance;
Conference_Titel :
Electrotechnical Conference, 1996. MELECON '96., 8th Mediterranean
Conference_Location :
Bari
Print_ISBN :
0-7803-3109-5
DOI :
10.1109/MELCON.1996.551188
