Characterisation of InGaAs/GaAs Quantum Dot Lasers Grown by Metal-Organic Vapour Phase Epitaxy

Author

Lever, P. ; Lowrie-Nunes, Z. ; Buda, M. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

277

Lastpage

280

Abstract

A major problem facing quantum dot lasers is gain saturation. This is caused by low gain volume and also a low wavefunction overlap within the quantum dots. One method to increase the gain volume is to increase the number of layers of quantum dots. This paper compares the characteristics of lasers with three and five layers of quantum dots. It is shown that five layer devices can be made with improved efficiency and wavelength characteristics without a significant increase in the losses

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; optical losses; optical saturation; quantum dot lasers; vapour phase epitaxial growth; wave functions; InGaAs-GaAs; InGaAs/GaAs lasers; device losses; gain saturation; gain volume; metal-organic vapour phase epitaxy; quantum dot lasers; quantum dots; wavefunction overlap; Capacitive sensors; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Laser theory; Quantum dot lasers; Semiconductor lasers; Stationary state; Temperature; US Department of Transportation; InGaAs; quantum dots; semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577544

Filename

1577544