Title :
Characterisation of InGaAs/GaAs Quantum Dot Lasers Grown by Metal-Organic Vapour Phase Epitaxy
Author :
Lever, P. ; Lowrie-Nunes, Z. ; Buda, M. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
Abstract :
A major problem facing quantum dot lasers is gain saturation. This is caused by low gain volume and also a low wavefunction overlap within the quantum dots. One method to increase the gain volume is to increase the number of layers of quantum dots. This paper compares the characteristics of lasers with three and five layers of quantum dots. It is shown that five layer devices can be made with improved efficiency and wavelength characteristics without a significant increase in the losses
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; optical losses; optical saturation; quantum dot lasers; vapour phase epitaxial growth; wave functions; InGaAs-GaAs; InGaAs/GaAs lasers; device losses; gain saturation; gain volume; metal-organic vapour phase epitaxy; quantum dot lasers; quantum dots; wavefunction overlap; Capacitive sensors; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Laser theory; Quantum dot lasers; Semiconductor lasers; Stationary state; Temperature; US Department of Transportation; InGaAs; quantum dots; semiconductor lasers;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577544
