Title :
Low bandgap InGaAs thermophotovoltaic cells
Author_Institution :
Spire Corp., Bedford, MA, USA
Abstract :
Thermophotovoltaic (TPV) systems convert low energy photons from low temperature heat sources into electrical power by means of photovoltaic cells. This paper describes low-bandgap indium gallium arsenide (InxGa1-xAs) cells used in such systems whose composition can be “tuned” to particular wavelengths of interest. The intent of this paper is to give an overview of these cells and enough useful data so that TPV system designers can predict the performance of these cells in particular applications. Data are presented for 1.65 μm (0.74 eV bandgap, In0.53Ga0.47 As) as well as 2.25 μm (0.55 eV, In0.72Ga0.28 As) cutoff wavelength cells. Cell short-circuit photocurrent densities up to 5 A/cm2 and open-circuit voltages over 480 mV (0.74 eV cells) and 310 mV (0.55 eV) are obtainable. Measured responsivity, dark current, and series resistance are presented and are used to numerically determine maximum output power for 0.55 eV and 0.74 eV InGaAs cells at blackbody temperatures of 1000 to 1500°C
Keywords :
III-V semiconductors; energy gap; gallium arsenide; indium compounds; photoconductivity; photovoltaic cells; short-circuit currents; 0.55 eV; 0.74 eV; 1.65 mum; 1000 to 1500 C; 2.25 mum; In0.53Ga0.47As; In0.72Ga0.28As; blackbody temperatures; dark current; low bandgap InGaAs thermophotovoltaic cells; low energy photons; low temperature heat sources; measured responsivity; open-circuit voltages; photovoltaic cells; series resistance; short-circuit photocurrent densities; thermophotovoltaic systems; Current measurement; Electrical resistance measurement; Indium gallium arsenide; Photoconductivity; Photonic band gap; Photovoltaic cells; Power measurement; Temperature; Voltage; Wavelength measurement;
Conference_Titel :
Energy Conversion Engineering Conference, 1996. IECEC 96., Proceedings of the 31st Intersociety
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3547-3
DOI :
10.1109/IECEC.1996.553831
