Title :
Photothermopower of amorphous semiconductors [thermophotovoltaics]
Author_Institution :
Dept. of Electr. & Electron. Eng., Victoria Univ. of Technol., Melbourne, Vic., Australia
Abstract :
Photothermopower and photoconductivity measurements on amorphous chalcogenides and silicon indicate that for chalcogenides, both electrons and holes contribute significantly to the conduction process, and junction fabrication is possible provided that the doping process is well-controlled. For the case of amorphous silicon, condition of sample preparation as well as impurity selectivity are important
Keywords :
amorphous semiconductors; elemental semiconductors; p-n junctions; photoconductivity; photovoltaic cells; semiconductor device models; semiconductor device testing; semiconductor doping; solar cells; Si; amorphous chalcogenides; amorphous silicon; conduction process; doping process; electrons; holes; impurity selectivity; junction fabrication; photoconductivity measurements; photothermopower measurements; sample preparation; thermophotovoltaics; Amorphous materials; Amorphous semiconductors; Amorphous silicon; Charge carrier processes; Conducting materials; Fabrication; Photoconductivity; Temperature; Thermal conductivity; Tunneling;
Conference_Titel :
Energy Conversion Engineering Conference, 1996. IECEC 96., Proceedings of the 31st Intersociety
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3547-3
DOI :
10.1109/IECEC.1996.553839
