Assembly of Bismuth Clusters into Nanowires Using Etched V-Grooves as Templates

Author

Ayesh, A.I. ; Partridge, J.G. ; Brown, S.A. ; Reichel, R. ; Dunbar, A.D.F.

Author_Institution

MacDiarmid Inst. of Adv. Mater. & Nanotechnol.

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

327

Lastpage

330

Abstract

The cluster assembly method reported here employs V-grooves as templates for nanowire fabrication. This technique allows the formation of contacted electrically conducting nanowires using simple optical lithography and without painstaking manipulation of the clusters. In–vacuum, temperature dependent I(V) measurements were performed on Bi wires with widths ∼1 μm and lengths 50 μm. The temperature dependent resistance of the Bi wires is explained by the variation in the carrier concentration in Bi with temperature.

Keywords

bismuth; carrier density; etching; metal clusters; nanotechnology; nanowires; photolithography; quantum wires; 1 mum; 50 mum; Bi; Bi wires; bismuth clusters; carrier concentration; cluster assembly; contacted nanowires; electrically conducting nanowires; etched V-grooves; in-vacuum measurements; nanowire fabrication; nanowires; optical lithography; temperature dependent measurements; temperature dependent resistance; templates; Assembly; Bismuth; Contacts; Etching; Lithography; Nanowires; Optical device fabrication; Temperature dependence; Temperature measurement; Wires; Bismuth; Nanowires; Templated assembly;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577557

Filename

1577557