Self-Assembled Lanthanum Gallate Microdots and Holes on Si

Author

Singh, A. ; Jakovidis, G. ; Sellar, J.R.

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

357

Lastpage

360

Abstract

Doped lanthanum gallate thin films deposited on Si(111) substrates by radio frequency (RF)-sputtering reveal the presence of self-assembled islands that are of the order of microns in size. These microdots are accompanied by slightly larger holes which form part of the same overall arrangement as the microdots. We present the results of our scanning electron microscope (SEM) and energy dispersive spectrometry (EDS) investigations of these microdots. The formation of the microdots is compared to that of quantum dots (QDs) on semiconductor surfaces, and a model is proposed for the formation process of the microdots and the holes by analogy with the nucleation and growth of islands at the nano-scale

Keywords

electrolytes; gallium compounds; island structure; lanthanum compounds; scanning electron microscopy; self-assembly; solid oxide fuel cells; sputter deposition; strontium compounds; thin films; Si; Si(111) substrates; doped thin films; energy dispersive spectrometry; intermediate-temperature electrolytes; lanthanum gallate holes; lanthanum gallate microdots; lanthanum gallate thin films; nanoscale growth; nucleation; radiofrequency sputtering; scanning electron microscope; self-assembled islands; self-assembly; solid oxide fuel cells; Dispersion; Instruments; Lanthanum; Quantum dots; Radio frequency; Scanning electron microscopy; Semiconductor thin films; Spectroscopy; Sputtering; Substrates; Lanthanum gallate thin films; Stranski-Krastanov mechanism; intermediate-temperature electrolytes; island formation; microdots; solid oxide fuel cells(SOFC);

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577564

Filename

1577564