Title :
Defect Structure Modification in Undoped and In-doped CdTe by Cd-Rich Annealing
Author :
Belas, E. ; Grill, R. ; Moravec, P. ; Horodysky, P. ; Hlidek, P. ; Franc, J. ; Hoschl, P.
Author_Institution :
Inst. of Phys., Charles Univ., Prague
Abstract :
The effect of Cd-rich annealing at 500°C and 600°C on electrical and optical properties of undoped and high-resistivity In-doped CdTe was investigated by the Hall effect, photoluminescence and infrared transmittance measurements in the temperature interval 4.2-300 K. Formation of a conductive r-type skin layer was observed in both materials and the InCd donor is found to be responsible for the n-type behaviour. Purification of the skin layer from fast diffusing elements was observed by photoluminescence, where a reduction of the intensity of the emission lines related to excitons bound to acceptors was detected
Keywords :
Hall effect; II-VI semiconductors; annealing; cadmium compounds; crystal defects; excitons; infrared spectra; photoluminescence; 4.2 to 300 K; 500 degC; 600 degC; Cd-rich annealing; CdTe; CdTe:In; Hall effect; In-doped CdTe; InCd donor; conductive skin layer; defect structure modification; emission lines; excitons; fast diffusing elements; infrared transmittance; intensity reduction; n-type skin layer; photoluminescence; purification; resistivity; undoped CdTe; Annealing; Conducting materials; Conductivity measurement; Electric variables measurement; Hall effect; Optical materials; Photoluminescence; Purification; Skin; Temperature measurement; Annealing; CdTe; Diffusion; component;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577569
