DocumentCode :
3043437
Title :
Reproducible Growth Of High Quality Lattice Matched Gainasp On InP By Solid Source MBE Using Phosphorus And Arsenic Valved Cracking Cells
Author :
Baillargeon, J.N. ; Cho, A.Y. ; Fischer, R.J.
Author_Institution :
AT&T Bell Laboratories
fYear :
1994
fDate :
6-13 Jul 1994
Keywords :
Fires; III-V semiconductor materials; Indium phosphide; Lattices; Optical diffraction; Ovens; Photoluminescence; Reservoirs; Solids; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:
Print_ISBN :
0-7803-1752-1
Type :
conf
DOI :
10.1109/LEOSST.1994.700532
Filename :
700532
Link To Document :
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