DocumentCode
3043640
Title
MBE Growth Of GaAs-based Pseudomorphic Lasers: Key Growth Trade-offs Between The InGaAs MQWs And The AlGaAs Cladding
Author
Larkins, E.C. ; Rothemund, W. ; Wagner, J. ; Baeumier, M. ; Burkner, S. ; Benz, W. ; Weisser, S. ; Schönfelder, A. ; Flemig, G. ; Brenn, R. ; Fleissner, J. ; Jantz, W. ; Rosenzweig, J. ; Ralston, J.D.
Author_Institution
Fraunhofer Institut fur Angewandte Festkorperphysik
fYear
1994
fDate
6-13 Jul 1994
Keywords
Capacitive sensors; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Optical materials; Quantum well devices; Raman scattering; Substrates; Temperature dependence; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:
Print_ISBN
0-7803-1752-1
Type
conf
DOI
10.1109/LEOSST.1994.700533
Filename
700533
Link To Document