3043640

MBE Growth Of GaAs-based Pseudomorphic Lasers: Key Growth Trade-offs Between The InGaAs MQWs And The AlGaAs Cladding

Larkins, E.C. ; Rothemund, W. ; Wagner, J. ; Baeumier, M. ; Burkner, S. ; Benz, W. ; Weisser, S. ; Schönfelder, A. ; Flemig, G. ; Brenn, R. ; Fleissner, J. ; Jantz, W. ; Rosenzweig, J. ; Ralston, J.D.

Fraunhofer Institut fur Angewandte Festkorperphysik

1994

6-13 Jul 1994

Capacitive sensors; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Optical materials; Quantum well devices; Raman scattering; Substrates; Temperature dependence; Threshold current;

English

ieee

Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:

0-7803-1752-1

conf

10.1109/LEOSST.1994.700533

700533