A high heat flux IGBT micro exchanger setup

Author

Meysenc, L. ; Saludjian, L. ; Bricard, A. ; Raël, S. ; Schaeffer, C. ; Wagner, D.

Author_Institution

Lab. d´´Electrotech. de Grenoble, CNRS, St. Martin d´´Heres, France

Volume

3

fYear

1996

fDate

6-10 Oct 1996

Firstpage

1309

Abstract

Much progress has been made over the past few years in the design of power electronic components leading to increasing development of IGBT transistors. Now IGBTs can dissipate power densities higher than 400 W/cm² and the thermal environment has become a major factor in their behavior. The aim of this paper is to demonstrate the high performance of a silicon microchannel setup. First, a thermal study enables the theoretical behavior of the setup to be analyzed. Then an optimization method based on genetic algorithms allows the determination of the best microchannels. Finally, the theoretical results are compared with experimental measurements

Keywords

genetic algorithms; heat exchangers; heat sinks; insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; semiconductor device testing; thermal analysis; experimental measurements; genetic algorithms; heat flux; micro heat exchanger; optimization method; performance; power IBGT; power dissipation densities; silicon microchannel setup; Electrical resistance measurement; Genetic algorithms; Insulated gate bipolar transistors; Microchannel; Optimization methods; Power electronics; Silicon; Temperature; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE

Conference_Location

San Diego, CA

ISSN

0197-2618

Print_ISBN

0-7803-3544-9

Type

conf

DOI

10.1109/IAS.1996.559235

Filename

559235