Title :
Properties of high-power Cryo-MOSFETs
Author_Institution :
American Superconductor Corp., Westborough, MA, USA
Abstract :
At cryogenic temperatures MOS field-effect high-voltage power transistors behave as super-semiconductor switches (Cryo-MOSFET). Important parameters such as on-resistance, breakdown voltage, thermal resistance, SOA, etc., of 500-1000 V power Cryo-MOSFETs operated in liquid nitrogen (LN2, T=77 K) at drain currents in the 10-100 A range have been measured. The results are reported. FREDFETs are also discussed
Keywords :
cryogenic electronics; electric breakdown; electric resistance; field effect transistor switches; power MOSFET; thermal resistance; 10 to 100 A; 500 to 1000 V; 77 K; FREDFET; MOS field-effect high-voltage power transistors; breakdown voltage; cryogenic temperatures; drain currents; high-power Cryo-MOSFET; liquid nitrogen; on-resistance; safe operating area; super-semiconductor switches; thermal resistance; Cryogenics; Current measurement; Electrical resistance measurement; Nitrogen; Power measurement; Power transistors; Semiconductor optical amplifiers; Switches; Temperature; Thermal resistance;
Conference_Titel :
Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-3544-9
DOI :
10.1109/IAS.1996.559256
