InGaAs/InP P-I (MQW)-N Surface Normal Electroabsorption Modulators Exhibiting Better Than 8:1 Contrast Ratio For 1.55μm Applications Grown By Gas Source MBE

Author

Pathak, R.N. ; Goossen, K.W. ; Cunningham, J.E. ; Jan, W.Y.

Author_Institution

AT&T Bell Laboratories

fYear

1994

fDate

6-13 Jul 1994

Keywords

Electrons; Excitons; Indium gallium arsenide; Indium phosphide; Quantum well devices; Reflectivity; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:

Print_ISBN

0-7803-1752-1

Type

DOI

10.1109/LEOSST.1994.700534

Filename

700534

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