3043834

InGaAs/InP P-I (MQW)-N Surface Normal Electroabsorption Modulators Exhibiting Better Than 8:1 Contrast Ratio For 1.55μm Applications Grown By Gas Source MBE

Pathak, R.N. ; Goossen, K.W. ; Cunningham, J.E. ; Jan, W.Y.

AT&T Bell Laboratories

1994

6-13 Jul 1994

Electrons; Excitons; Indium gallium arsenide; Indium phosphide; Quantum well devices; Reflectivity; Surface waves;

English

ieee

Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:

0-7803-1752-1

conf

10.1109/LEOSST.1994.700534

700534