Title :
An SCR-GTO model designed for a basic level of model performance
Author :
Wong, K.Y. ; Lauritzen, P.O. ; Venkata, S.S. ; Sundaram, A. ; Adapa, R.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Abstract :
The SCR-GTO model in this paper is specifically designed to meet the performance features proposed for the basic performance level. An innovative and unique quasi-physical modeling technique combines a behavioral switch model and a physical diode model to avoid the convergence difficulties which can occur when regenerative thyristor models are used. A standard benchmark circuit is proposed for validating the switching performance of SCR and GTO models
Keywords :
semiconductor device models; semiconductor diodes; semiconductor switches; thyristors; SCR-GTO model; basic performance level; behavioral switch model; benchmark circuit; model performance; performance features; physical diode model; quasi-physical modeling technique; regenerative thyristor models; switching performance; Diodes; Equations; Integrated circuit modeling; Resistors; Solid modeling; Switches; Switching circuits; Thermal resistance; Thermal stresses; Thyristors;
Conference_Titel :
Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-3544-9
DOI :
10.1109/IAS.1996.559268
