Title :
MOVPE Growth Chamber Pressure Influence In Si Doping Of InP And InGaAs
Author :
Narayanan, A. ; Nguyen, C. ; Hooper, W. ; Rench, D.
Author_Institution :
Hughes Research Laboratories
Keywords :
Doping; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Laboratories; Temperature;
Conference_Titel :
Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:
Print_ISBN :
0-7803-1752-1
DOI :
10.1109/LEOSST.1994.700535
