A low power S-band receiver using GaAs pHEMT technology

Author

Peng, Yangyang ; Wang, Xiaoying ; Ma, Fangyue ; Sui, Wenquan

Author_Institution

Zhejiang-California Nanosyst. Inst., Zhejiang Univ., Hangzhou, China

fYear

2011

fDate

12-14 Dec. 2011

Firstpage

83

Lastpage

86

Abstract

A two-chip S-band receiver has been designed and demonstrated in this paper. The proposed receiver is composed by a two stage low-noise amplifier (LNA) and a resistive type mixer. To achieve wide operation bandwidth as well as low noise figure, the LNA uses wideband matching network and negative feedback technique. Measured results show the LNA obtains a minimum noise figure of 2.4 dB with 17 dB gain. The input and output return loss all exceed -10 dB across the working frequency. To obtain high linearity performance, a resistive type mixer is adopted in this design. With simulation, the mixer shows a conversion loss of 7.2 dB. The isolations among RF, LO and IF ports are all greater than 20 dB. The power consumption of this receiver is 33 mW.

Keywords

HEMT integrated circuits; III-V semiconductors; UHF mixers; gallium arsenide; low noise amplifiers; low-power electronics; radio receivers; GaAs; gain 17 dB; gain 2.4 dB; loss 7.2 dB; low power S-band receiver; negative feedback technique; pHEMT technology; power 33 mW; resistive type mixer; two stage low-noise amplifier; wideband matching network; Gain; Gallium arsenide; Microwave technology; Mixers; Noise; PHEMTs; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits (ISIC), 2011 13th International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-61284-863-1

Type

conf

DOI

10.1109/ISICir.2011.6131885

Filename

6131885