A Ka-band MMIC Doherty Power Amplifier using GaAs pHEMT technology

Author

Wang, Xiaoying ; Peng, Yangyang ; Ma, Fangyue ; Sui, Wenquan

Author_Institution

Zhejiang-California Nanosyst. Inst., Zhejiang Univ., Hangzhou, China

fYear

2011

fDate

12-14 Dec. 2011

Firstpage

91

Lastpage

93

Abstract

A fully integrated Ka-band Monolithic microwave integrated circuit (MMIC) Doherty Power Amplifier (PA) is designed and demonstrated in this paper. The proposed Doherty PA maily consists of a Lange coupler, carrier amplifier branch, peaking amplifier branch and impedance transformer network. offset lines are introduced in each branch to overcome the inherent defects of conventional Doherty PA. Electromagnetic (EM) simulated results show the proposed Doherty PA obtains a small signal gain over 5.5dB from 31GHz to 35GHz with a compact die size of 2mm×1.7mm. Power added efficiency (PAE) is over 19.8% at 6dB back-off with saturated output power over 26dBm.

Keywords

MMIC power amplifiers; gallium arsenide; high electron mobility transistors; Ka-band MMIC Doherty power amplifier; Lange coupler; amplifier branch; carrier amplifier branch; compact die size; frequency 31 GHz to 35 GHz; impedance transformer network; monolithic microwave integrated circuit; pHEMT technology; power added efficiency; Couplers; Impedance; Linearity; MMICs; Microwave communication; Power generation; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits (ISIC), 2011 13th International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-61284-863-1

Type

conf

DOI

10.1109/ISICir.2011.6131887

Filename

6131887