DocumentCode
3044193
Title
A simple technique for Al planarization
Author
Bai, P. ; Lu, T.-M. ; Roberts, S.
Author_Institution
Rensselaer Polytech. Inst., Troy, NY, USA
fYear
1988
fDate
13-14 June 1988
Firstpage
382
Lastpage
389
Abstract
It is shown that with a partially ionized beam (PIB) deposition technique, a complete planarization of the Al layer can be obtained using two-step deposition with different substrate temperature. First, the Al plugs in oxide vias with aspect ratio up to two were formed at a substrate temperature of 150 degrees C. The Al vapor contained 1-2% of self-ions and the substrate was negatively biased to 2-4 kV during deposition. After the plugs were formed, gradually raising the substrate temperature (>
Keywords
aluminium; metallisation; semiconductor technology; vapour deposition; 150 degC; 2 to 4 kV; 300 degC; Al planarization; Al plugs; SEM; aspect ratio; negatively biased substrate; oxide vias; partially ionised beam deposition; substrate temperature; two-step deposition; Delay; Heating; Ion beams; Metallization; Planarization; Plugs; Scanning electron microscopy; Substrates; Temperature; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1988. Proceedings., Fifth International IEEE
Conference_Location
Santa Clara, CA, USA
Type
conf
DOI
10.1109/VMIC.1988.14216
Filename
14216
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