• DocumentCode
    3044323
  • Title

    Kinetics Of Islands And Monolayer Steps In Molecular Beam Epitaxy Revealed By In -situ Scanning Electron Microscopy

  • Author

    Inoue, N.

  • Author_Institution
    NTT LSI Laboratories
  • fYear
    1994
  • fDate
    6-13 Jul 1994
  • Keywords
    Annealing; Atomic layer deposition; Buffer layers; Electron beams; Gallium arsenide; Kinetic theory; Molecular beam epitaxial growth; Rough surfaces; Scanning electron microscopy; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:
  • Print_ISBN
    0-7803-1752-1
  • Type

    conf

  • DOI
    10.1109/LEOSST.1994.700537
  • Filename
    700537
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3044323