A wideband 0.6dB insertion loss +20.5dBm P1dB CMOS T/R switch

Author

Chen, Xuesong ; Raja, M. Kumarasamy

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore

fYear

2011

fDate

12-14 Dec. 2011

Firstpage

184

Lastpage

187

Abstract

This paper provides a detailed analysis of performance limitations in RF CMOS T/R switches, and proposes a novel method to improve the insertion loss and power handling capability by dynamically biasing the body and the gate of the switch transistors to make the device operating in linear region under large signals. The concept is implemented with circuits only and no inductor is used. A prototype was designed and implemented in standard 0.18-μm CMOS technology. The experimental results show 0.6dB insertion loss at 2.4GHz, 20.5dBm P1dB for the transmitter path of the T/R Switch with a single 1.8V control voltage. The die area excluding IO pads is 0.14mm by 0.12mm. The performance meets the requirements of most mobile wireless communication systems.

Keywords

CMOS integrated circuits; microwave switches; radio transmitters; radiofrequency integrated circuits; CMOS technology; RF CMOS T/R switch; frequency 2.4 GHz; linear region; loss 0.6 dB; mobile wireless communication systems; power handling capability; size 0.12 mm; size 0.14 mm; size 0.18 mum; switch transistors; transmitter path; voltage 1.8 V; CMOS integrated circuits; Insertion loss; Radio frequency; Receivers; Switches; Switching circuits; Transmitters; CMOS; T/R switch; low insertion loss; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits (ISIC), 2011 13th International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-61284-863-1

Type

conf

DOI

10.1109/ISICir.2011.6131908

Filename

6131908