Title :
III-V Nitrides For Optical Emitters
Author_Institution :
University of Illinois
Keywords :
Conductivity; Gallium nitride; III-V semiconductor materials; Light emitting diodes; Molecular beam epitaxial growth; Optical films; Optical sensors; Plasma temperature; Stimulated emission; Substrates;
Conference_Titel :
Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:
Print_ISBN :
0-7803-1752-1
DOI :
10.1109/LEOSST.1994.700543
