• DocumentCode
    3044530
  • Title

    60-GHz SP4T switch with ESD protection

  • Author

    He, Jin ; Xiong, Yong-Zhong ; Zhang, Yue Ping

  • Author_Institution
    Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
  • fYear
    2011
  • fDate
    12-14 Dec. 2011
  • Firstpage
    188
  • Lastpage
    191
  • Abstract
    This paper proposes a new π-network-based single-pole-four-throw (SP4T) switch with inherent ESD protection for 60-GHz applications, which achieves a small core area of 274 μm × 262 μm with a 1.2-V 65-nm bulk CMOS RF process. At 60 GHz, the proposed switch exhibits a simulated performance of 3.4-dB insertion loss, 25.7-dB isolation between Ant 1 and Ant 2/3/4, and 43-dB isolation between Ant 2 and Ant 3/4. At an operating frequency of 60 GHz, the simulated input and output return losses are both around 13 dB; the input P1dB of the power-handling capability is 11.1 dBm; and the switching speed is around 2.4 ns. RF ESD protection for the SP4T switch has been verified to pass the 2-kV HBM test by simulation.
  • Keywords
    CMOS integrated circuits; electrostatic discharge; field effect MIMIC; microwave switches; π-network-based single-pole-four-throw switch; HBM test; RF ESD protection; SP4T Switch; bulk CMOS RF process; frequency 60 GHz; loss 3.4 dB; size 65 nm; voltage 1.2 V; voltage 2 kV; CMOS integrated circuits; Electrostatic discharges; Insertion loss; Radio frequency; Switches; Switching circuits; Topology; CMOS; ESD; SP4T switch; millimeter-wave integrated cirtuit (MMIC);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuits (ISIC), 2011 13th International Symposium on
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-61284-863-1
  • Type

    conf

  • DOI
    10.1109/ISICir.2011.6131909
  • Filename
    6131909