DocumentCode :
3044548
Title :
Material Design Of Wide Bandgap III-V Nitride Alloys
Author :
Sakai, Shiro ; Ueta, Yoshihiro ; Sat, Hisashi
Author_Institution :
Tokushima University
fYear :
1994
fDate :
6-13 Jul 1994
Keywords :
Design engineering; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Knowledge engineering; Light emitting diodes; Multilevel systems; Photonic band gap; Stability; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:
Print_ISBN :
0-7803-1752-1
Type :
conf
DOI :
10.1109/LEOSST.1994.700544
Filename :
700544
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3044548
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