Title : 
Non-Linear Fluidic Integrated Circuits Realized by Pneumatic-Field Effect Transistors with Controllable Output Resistance
         
        
            Author : 
Takao, H. ; Tanaka, N. ; Sugiura, M. ; Sawada, K. ; Ishida, M.
         
        
            Author_Institution : 
Toyohashi Univ. of Technol., Toyohashi
         
        
        
        
        
        
            Abstract : 
This paper reports `non-linear´ micro fluidic integrated circuit technology using newly developed vertical microvalve, Pneumatic-field effect transistor (Pneumatic-FET) with controllability of its output resistance. In addition to the basic linear amplifiers of pressures obtained by positive output resistance of pneumatic-FET, the negative output resistance is attractive to realize non-linear functions in the smallest number of FETs. In this study, we have succeeded to fabricate ´non-linear´ fluidic circuits with hysteresis or kinked transfer function utilizing negative output resistance of vertical pneumatic-FET for the first time. The novel device structure and the simple fabrication technology for controllable output resistance, and characteristics of the pneumatic integrated circuits are demonstrated.
         
        
            Keywords : 
field effect transistors; microfluidics; microvalves; pneumatic systems; transfer functions; controllable output resistance; nonlinear fluidic integrated circuits; pneumatic-field effect transistors; transfer function; vertical microvalve; Control systems; Controllability; Fabrication; Fluid flow control; Fluidic microsystems; Hysteresis; Integrated circuit technology; MOSFETs; Microfluidics; Microvalves;
         
        
        
        
            Conference_Titel : 
Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
         
        
            Conference_Location : 
Sorrento
         
        
        
            Print_ISBN : 
978-1-4244-2977-6
         
        
            Electronic_ISBN : 
1084-6999
         
        
        
            DOI : 
10.1109/MEMSYS.2009.4805429