3044560

Substrate Misorientation Effect On Cubic And Hexagonal GaN Grown On GaAs By Molecular Beam Epitaxy Using RF-radical Nitrogen Source

Hoshi, Hiroyuki ; Kikuchi, Akihiko ; Kishino, Katsumi

Sophia University

1994

6-13 Jul 1994

Cleaning; Crystalline materials; Crystals; Gallium arsenide; Gallium nitride; Molecular beam epitaxial growth; Nitrogen; Photoluminescence; Substrates; X-ray diffraction;

English

ieee

Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:

0-7803-1752-1

conf

10.1109/LEOSST.1994.700545

700545