A dual-band LC voltage-controlled oscillator in 0.13μm CMOS technology

Author

Maisurah, M.H.S. ; Emran, F.N. ; Idham, M.N.F. ; Rahim, A. I Abdul

Author_Institution

Adv. Phys. Technol. Lab., TM Innovation Centre, Cyberjaya, Malaysia

fYear

2011

fDate

12-14 Dec. 2011

Firstpage

192

Lastpage

195

Abstract

A dual-band, low phase-noise LC voltage-controlled oscillator (VCO) has been demonstrated in a 0.13μm CMOS process. The operating frequency of the dual-band VCO covers from 1.51GHz to 1.92GHz and from 2.13GHz to 2.73GHz. The proposed VCO features phase-noise of -116.4dBc/Hz and -121.5dBc/Hz at 1MHz offset frequency for both low corner and high corner end of the low-band operation. For high-band operation, phase-noise performance of -109.6dBC/Hz and -118.2dBc/Hz at 1MHz offset frequency are achieved. At 3V supply voltage, the power dissipation is 54.3mW for the low-band operation and 51.5mW for the high-band operation.

Keywords

CMOS integrated circuits; phase noise; voltage-controlled oscillators; CMOS technology; dual-band LC voltage-controlled oscillator; frequency 1 MHz; frequency 1.51 GHz to 1.92 GHz; frequency 2.13 GHz to 2.73 GHz; offset frequency; phase noise; power 54.3 mW; size 0.13 mum; voltage 3 V; CMOS integrated circuits; CMOS technology; Dual band; Transceivers; Transistors; Tuning; Voltage-controlled oscillators; CMOS RFIC; Dual-band VCO; LC-tank; reconfigurable VCO;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits (ISIC), 2011 13th International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-61284-863-1

Type

conf

DOI

10.1109/ISICir.2011.6131910

Filename

6131910