Title :
Growth And Properties Of GaN Produced By ECR-MBE
Author_Institution :
Boston University
Keywords :
Cyclotrons; Doping; Electrons; Gallium nitride; Hydrogen; Molecular beam epitaxial growth; Plasma materials processing; Plasma properties; Resonance;
Conference_Titel :
Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:
Print_ISBN :
0-7803-1752-1
DOI :
10.1109/LEOSST.1994.700546
