DocumentCode
3044591
Title
Gaseous Source Epitaxy Technologies For Wide Bandgap II-VI Semiconductors
Author
Kolodziejski, Leslie A.
Author_Institution
Massachusetts Institute of Technology
fYear
1994
fDate
6-13 Jul 1994
Keywords
Capacitance-voltage characteristics; Epitaxial growth; Hydrogen; Molecular beam epitaxial growth; Nitrogen; Photonic band gap; Plasma sources; Solids; Temperature; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:
Print_ISBN
0-7803-1752-1
Type
conf
DOI
10.1109/LEOSST.1994.700548
Filename
700548
Link To Document