DocumentCode :
3044591
Title :
Gaseous Source Epitaxy Technologies For Wide Bandgap II-VI Semiconductors
Author :
Kolodziejski, Leslie A.
Author_Institution :
Massachusetts Institute of Technology
fYear :
1994
fDate :
6-13 Jul 1994
Keywords :
Capacitance-voltage characteristics; Epitaxial growth; Hydrogen; Molecular beam epitaxial growth; Nitrogen; Photonic band gap; Plasma sources; Solids; Temperature; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:
Print_ISBN :
0-7803-1752-1
Type :
conf
DOI :
10.1109/LEOSST.1994.700548
Filename :
700548
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3044591
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