Title :
Material Issues In Epitaxy III-V Compound Semiconductors And Their Effects On Device Reliability
Author_Institution :
AT&T Bell Laboratories
Keywords :
Diode lasers; Epitaxial growth; III-V semiconductor materials; Materials reliability; Optical materials; Optical microscopy; Optoelectronic devices; Semiconductor device reliability; Surface emitting lasers; Surface morphology;
Conference_Titel :
Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:
Print_ISBN :
0-7803-1752-1
DOI :
10.1109/LEOSST.1994.700549