GSM/EDGE Power Amplifier module with improved low-power efficiency

Author

Li, Jinbo ; Mo, Tingting ; Xu, Feng

Author_Institution

Center for Analog/RF IC(CARFIC), Shanghai Jiao Tong Univ., Shanghai, China

fYear

2011

fDate

12-14 Dec. 2011

Firstpage

551

Lastpage

554

Abstract

A dual mode 900MHz GSM/EDGE Power Amplifier module (PAM) is designed using IBM 0.35μm SiGe BiCMOS technology. Bypass of the third stage is adopted for EDGE mode, leaving the final stage to work in Class E for high efficiency of GSM mode. Additionally, automatic level control (ALC) is employed to improve the power added efficiency (PAE) of low-power EDGE, along with the harmonic termination technique used in the inter-stage matching network for linearity requirement of EDGE. Simulation shows that the proposed PAM exhibits 29.5% PAE and -36.3dBc ACPR at 27dBm output for EDGE mode and 49% PAE at 35dBm output for GSM mode. After ALC, the average PAE of EDGE is boosted from 2.0% to 3.4%, which is 70% improved.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF power amplifiers; cellular radio; ALC; GSM/EDGE power amplifier module; IBM BiCMOS technology; SiGe; automatic level control; class E power amplifier; frequency 900 MHz; interstage matching network; linearity requirement; size 0.35 mum; Detectors; GSM; Harmonic analysis; Image edge detection; Linearity; Power amplifiers; Silicon germanium; SiGe BiCMOS; automatic level control; power amplifier module; stage-bypass;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits (ISIC), 2011 13th International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-61284-863-1

Type

conf

DOI

10.1109/ISICir.2011.6131922

Filename

6131922