DocumentCode :
3045059
Title :
Effect of Electrode Geometry and Surface Passivation on Corrosion of Polycrystalline Silicon under High Relative Humidity and Bias
Author :
Liu, F. ; Roper, C.S. ; Carraro, C. ; Maboudian, R.
Author_Institution :
Univ. of California, Berkeley, CA
fYear :
2009
fDate :
25-29 Jan. 2009
Firstpage :
611
Lastpage :
614
Abstract :
The combination of high electric fields and moisture from the environment can lead to electrochemical reactions causing corrosion, which can severely impact microelectromechanical systems (MEMS) device reliability and lifetime. In this paper, we present a detailed study of the corrosion behavior and surface passivation methods for enhancing the corrosion resistance of surface micromachined polycrystalline Si (poly-silicon) electrodes at high relative humidity and applied voltage. The results indicate the occurrence of anodic oxidation under positive bias and absence of cathodic protection under negative bias. Additionally, surface passivation chemistry, in particular employing self-assembled monolayers (SAM), is found to effectively enhance the corrosion resistance of the electrodes.
Keywords :
corrosion resistance; electrochemical electrodes; elemental semiconductors; micromachining; micromechanical devices; monolayers; oxidation; passivation; reliability; self-assembly; silicon; MEMS device reliability; Si; anodic oxidation; applied voltage; corrosion resistance; electrode geometry effect; high electric fields; high relative humidity; microelectromechanical system; polycrystalline silicon corrosion; self-assembled monolayers; surface micromachined polycrystalline; surface passivation chemistry; Corrosion; Electrodes; Geometry; Humidity; Microelectromechanical systems; Micromechanical devices; Moisture; Passivation; Silicon; Surface resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
Conference_Location :
Sorrento
ISSN :
1084-6999
Print_ISBN :
978-1-4244-2977-6
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2009.4805456
Filename :
4805456
Link To Document :
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