Title :
Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications
Author :
Tazzoli, A. ; Cellere, G. ; Autizi, E. ; Peretti, V. ; Paccagnella, A. ; Meneghesso, G.
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padova
Abstract :
The impact of 2 MeV protons and 10 keV X-rays radiation stresses on electrostatically actuated ohmic RF-MEMS switches has been analyzed at increasing radiation dose and during subsequent annealing at room temperature. Small variations of electrical parameters (actuation and release voltages) have been identified, accompanied by a strong rf-performances degradation. Monte Carlo TRIM simulations have been carried out to understand the mechanisms responsible of such degradations, finding that both NIEL and ionizing damages appear to play an important role.
Keywords :
Monte Carlo methods; annealing; electrostatic actuators; microswitches; protons; Monte Carlo TRIM simulations; X-rays radiation stresses; annealing; electron volt energy 10 keV; electron volt energy 2 MeV; electrostatic actuators; ohmic RF-MEMS switches; protons; radiation sensitivity; spatial applications; temperature 293 K to 298 K; Annealing; Degradation; Electrostatic analysis; Protons; Radiofrequency microelectromechanical systems; Stress; Switches; Temperature sensors; Voltage; X-rays;
Conference_Titel :
Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-2977-6
Electronic_ISBN :
1084-6999
DOI :
10.1109/MEMSYS.2009.4805462
