• DocumentCode
    3045581
  • Title

    GaAs opto-thyristor for pulsed power applications

  • Author

    Hur, J.H. ; Hadizad, P. ; Hummel, S.R. ; Dapkus, P. ; Fetterman, H.R. ; Gundersen, M.

  • Author_Institution
    Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
  • fYear
    1990
  • fDate
    26-28 Jun 1990
  • Firstpage
    325
  • Lastpage
    329
  • Abstract
    Results of an investigation of GaAs-based opto-thyristors for pulsed power applications are presented. In this study, semi-insulating GaAs was used for the base layer of the opto-thyristor, and the device was optically triggered with an AlGaAs laser diode. The blocking voltage of the opto-thyristor was ⩾800 V, the peak pulsed current was ~300 A, and di/dt was ⩾1.5×1010 A/s. These results demonstrate that III-V based junction devices have significant potential for pulsed power switching applications
  • Keywords
    III-V semiconductors; gallium arsenide; photoconducting devices; pulsed power technology; semiconductor junction lasers; thyristors; AlGaAs laser diode; GaAs optothyristor; III-V based junction devices; blocking voltage; peak pulsed current; pulsed power applications; semiconductor; Gallium arsenide; Optical devices; Optical materials; Optical pulses; Optical switches; Power semiconductor switches; Pulse power systems; Substrates; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Modulator Symposium, 1990., IEEE Conference Record of the 1990 Nineteenth
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/MODSYM.1990.200976
  • Filename
    200976
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3045581