Title :
A 5-bit 500-MS/s time-domain flash ADC in 0.18-μm CMOS
Author :
Min, Young-Jae ; Abdullah, Ammar ; Kim, Hoon-Ki ; Kim, Soo-Won
Author_Institution :
Dept. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
A 5-bit 500-MS/s time-domain flash ADC is presented. The proposed ADC consists of a reference resistor ladder, two voltage-to-time converter arrays, a time-domain comparator array and a digital encoder without sample-and-hold. In order to achieve low-power consumption with high conversion-speed and to enhance design reusability in terms of a highly digital implementation with more regular mask patterns, the time-domain comparison is devised in the flash ADC. The prototype has been implemented and fabricated in a standard 0.18(im CMOS technology and occupies 0.132mm2 without pads. The measured SNDR and SFDR up to the Nyquist frequency are 26.6 and 35.1 dB, respectively. And the peak DNL and INL are measured as 0.43 LSB and 0.58 LSB, respectively. The prototype consumes 8mW with a 1.8-V supply voltage.
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; CMOS process; DNL; INL; Nyquist frequency; SFDR; SNDR; bit rate 500 Mbit/s; digital encoder; low-power consumption; power 8 mW; reference resistor ladder; sample-and-hold circuits; size 0.18 mum; time-domain comparator array; time-domain flash ADC; voltage 1.8 V; voltage-to-time converter arrays; word length 5 bit; CMOS integrated circuits; CMOS technology; Delay; Frequency measurement; Power demand; Solid state circuits; Time domain analysis; analog-to-digital converter; flash converter; time-domain comparison; voltage-to-time converter;
Conference_Titel :
Integrated Circuits (ISIC), 2011 13th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-61284-863-1
DOI :
10.1109/ISICir.2011.6131965