• DocumentCode
    3045816
  • Title

    Triggering GaAs lock-on switches with laser diode arrays

  • Author

    Loubriel, G. ; Helgeson, W. ; McLaughlin, D. ; Malley, M.O. ; Zutavern, F. ; Rosen, A. ; Stabile, P.

  • Author_Institution
    Sandia Nat. Lab., Albuquerque, NM, USA
  • fYear
    1990
  • fDate
    26-28 Jun 1990
  • Firstpage
    352
  • Lastpage
    356
  • Abstract
    The authors describe the progress that has led to the triggering of high-power photoconductive semiconductor switches (PCSSs) with laser diodes. An 850 W optical pulse from a laser diode array has been used to trigger a 1.5 cm long switch that delivered 8.5 MW to a 38.3 Ω load. Using 166 W arrays, a 2.5 mm long switch has been triggered, delivering 1.2 MW with 600 ps risetimes at pulse repetition frequencies of 1 kHz. These 2.5 mm long switches were tested for pulse lifetime and survived 105 pulses at 1.0 MW levels. In single pulse operation up to 600 A has been switched with laser diode arrays. The goal is to switch up to 5 kA in a single shot mode and up to 100 MW repetitively at up to 10 kHz. It is pointed out that these goals are feasible since the switches can be used in parallel or in series
  • Keywords
    III-V semiconductors; gallium arsenide; photoconducting devices; pulsed power technology; semiconductor junction lasers; semiconductor switches; 1.2 MW; 8.5 MW; GaAs photoconductive semiconductor switches; laser diode arrays; lock-on switches; optical pulse; pulse lifetime; pulse repetition; pulsed power technology; semiconductors; Diode lasers; Gallium arsenide; Laser mode locking; Optical arrays; Optical pulses; Optical switches; Packaging; Power semiconductor switches; Semiconductor laser arrays; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Modulator Symposium, 1990., IEEE Conference Record of the 1990 Nineteenth
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/MODSYM.1990.200990
  • Filename
    200990