DocumentCode
3045816
Title
Triggering GaAs lock-on switches with laser diode arrays
Author
Loubriel, G. ; Helgeson, W. ; McLaughlin, D. ; Malley, M.O. ; Zutavern, F. ; Rosen, A. ; Stabile, P.
Author_Institution
Sandia Nat. Lab., Albuquerque, NM, USA
fYear
1990
fDate
26-28 Jun 1990
Firstpage
352
Lastpage
356
Abstract
The authors describe the progress that has led to the triggering of high-power photoconductive semiconductor switches (PCSSs) with laser diodes. An 850 W optical pulse from a laser diode array has been used to trigger a 1.5 cm long switch that delivered 8.5 MW to a 38.3 Ω load. Using 166 W arrays, a 2.5 mm long switch has been triggered, delivering 1.2 MW with 600 ps risetimes at pulse repetition frequencies of 1 kHz. These 2.5 mm long switches were tested for pulse lifetime and survived 105 pulses at 1.0 MW levels. In single pulse operation up to 600 A has been switched with laser diode arrays. The goal is to switch up to 5 kA in a single shot mode and up to 100 MW repetitively at up to 10 kHz. It is pointed out that these goals are feasible since the switches can be used in parallel or in series
Keywords
III-V semiconductors; gallium arsenide; photoconducting devices; pulsed power technology; semiconductor junction lasers; semiconductor switches; 1.2 MW; 8.5 MW; GaAs photoconductive semiconductor switches; laser diode arrays; lock-on switches; optical pulse; pulse lifetime; pulse repetition; pulsed power technology; semiconductors; Diode lasers; Gallium arsenide; Laser mode locking; Optical arrays; Optical pulses; Optical switches; Packaging; Power semiconductor switches; Semiconductor laser arrays; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Modulator Symposium, 1990., IEEE Conference Record of the 1990 Nineteenth
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/MODSYM.1990.200990
Filename
200990
Link To Document