Analytical studies of nonlinear photoconductive switching in bulk GaAs semiconductor switches

Author

Browder, M. ; Nunnally, W.

Author_Institution

Appl. Phys. Electron. Res. Center, Texas Univ., Arlington, TX, USA

fYear

1990

fDate

26-28 Jun 1990

Firstpage

361

Lastpage

366

Abstract

Recent analytical investigations of nonlinear photoconductive switches are discussed. The dependencies of semiconductive parameters on the electric field in conjunction with the nonuniform space charge distribution (due to contact injection) appear to be of some importance in nonlinear photoconductive switching. The authors discuss a computer model under development that addresses the spatial dependencies of nonlinear photoconductive switching. This model takes into account the recombination dependence of diffusion associated with double injection. In addition, the model includes field-dependent trapping parameters and mobilities. The relevant equations are presented along with the preliminary results of the computer model

Keywords

III-V semiconductors; electronic engineering computing; gallium arsenide; photoconducting devices; semiconductor device models; semiconductor switches; bulk GaAs semiconductor switches; computer model; electric field; field-dependent trapping parameters; nonlinear photoconductive switches; nonuniform space charge distribution; semiconductive parameters; Charge carrier density; Conducting materials; Gallium arsenide; Optical materials; Optical saturation; Optical switches; Photoconducting devices; Photoconductivity; Power semiconductor switches; Radiative recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Modulator Symposium, 1990., IEEE Conference Record of the 1990 Nineteenth

Conference_Location

San Diego, CA

Type

conf

DOI

10.1109/MODSYM.1990.200992

Filename

200992