Title :
Design of a radiation tolerant CMOS image sensor
Author :
Qian, Xinyuan ; Yu, Hang ; Zhao, Bo ; Chen, Shoushun ; Low, Kay Soon
Author_Institution :
VIRTUS IC Design Center of Excellence, Nanyang Technol. Univ., Singapore, Singapore
Abstract :
This paper presents the design of a radiation tolerant CMOS image sensor for space applications. The pixel is based on a commercially available 4T pinned photodiode architecture and is designed using a number of radiation-tolerant physical layout techniques. In addition, a simple yet robust programmable column biasing current is proposed to deal with the dramatic temperature fluctuations. A prototype chip consisting 256×256 pixel array has been implemented using TSMC 0.18 CIS process.
Keywords :
CMOS image sensors; photodiodes; space vehicle electronics; 4T pinned photodiode architecture; TSMC CIS process; dramatic temperature fluctuations; pixel array; radiation tolerant CMOS image sensor design; radiation-tolerant physical layout techniques; robust programmable column biasing current; Arrays; CMOS image sensors; Dark current; Leakage current; Photodiodes; Transistors;
Conference_Titel :
Integrated Circuits (ISIC), 2011 13th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-61284-863-1
DOI :
10.1109/ISICir.2011.6131984
